Fabrication and characterisation of InP/InGaAs heterojunction bipolar transistors

Pillow, Daniel Timothy (2013) Fabrication and characterisation of InP/InGaAs heterojunction bipolar transistors. MSc(R) thesis, University of Glasgow.

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Abstract

Heterojunction bipolar transistors (HBTs) have well established themselves since the invention of modern day epitaxial growth technology in nearly all areas of electronic integrated circuits varying from high speed Indium Phosphide (InP) based devices through to future high-power gallium nitride (GaN) applications. This thesis begins with a review of the current state of the art HBT devices, along with comparison between different materials used within such devices. A large portion of the work covers the fabrication process of an Indium Phosphide/ Indium Gallium Arsenide (InP/InGaAs) based Single-HBT (SHBT) using only wet etching, along with the comparison between different techniques involved. RF and DC measurements for the fabricated devices are also reported of HBTs with emitter size 16μm × 8μm with achieving speeds of FMAX and FT being, 3.5GHz and 9GHz respectively. Finally, being that the accurate extraction of the small-signal equivalent circuit is a crucial part in the process development and optimisation of HBTs, the investigation and development of an accurate small signal device modelling technique was evaluated and developed this project.

Item Type: Thesis (MSc(R))
Qualification Level: Masters
Keywords: InP/InGaAs, HBT, SHBT
Subjects: T Technology > T Technology (General)
Colleges/Schools: College of Science and Engineering > School of Engineering
Funder's Name: UNSPECIFIED
Supervisor's Name: Wasige, Dr. Edward
Date of Award: 2013
Depositing User: Mr D Pillow
Unique ID: glathesis:2013-4160
Copyright: Copyright of this thesis is held by the author.
Date Deposited: 04 Apr 2013 12:35
Last Modified: 04 Apr 2013 12:37
URI: http://theses.gla.ac.uk/id/eprint/4160

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