Advanced gallium nitride technology for microwave power amplifiers

Al-Khalidi, Abdullah Koutaiba (2015) Advanced gallium nitride technology for microwave power amplifiers. PhD thesis, University of Glasgow.

Due to Embargo and/or Third Party Copyright restrictions, this thesis is not available in this service.

Abstract

Gallium nitride (GaN) based technology has been heavily researched over the past two decades due to its ability to deliver higher powers and higher frequencies that are demanded by the market for various applications. One of GaN’s main advantages lies in its ability to form heterojunctions to wider bandgap materials such as Aluminium Gallium Nitride (AlGaN) and Aluminium Nitride (AlN). The heterostructure results in the formation of the so called 2 dimensional electron gas (2DEG), which exhibits high electron densities of up to 6E13 cm−2 and high electron mobilities of up to 2000 cm2/V·s that enable the devices to support high current densities. Furthermore, it supports very high breakdown fields of 3.3 MV/cm due to its wide bandgap of 3.4 eV. The main objective of this work was to further advance the transistor technology using simple, cost effective and reliable techniques. The AlN/GaN material system exhibits higher sheet carrier concentrations compared to the conventional ternary AlGaN barrier, but introduces additional challenges due to its reduced thickness of 2-6 nm compared to 18-30 nm of AlGaN. The additional challenges of the thin AlN binary barrier include strain relaxation, high gate leakage currents and high Ohmic contact resistances due to its high bandgap of 6.2 eV. In this work, a thin (5 nm) in-situ SiNx passivation layer was employed to reduce the strain relaxation, reduce gate leakage currents and improve Ohmic contacts resistances. The optimised Ohmic contact annealing condition resulted in an Ohmic contact resistance of 0.4 Ω·mm and a sheet resistance of 300 Ω/

Item Type: Thesis (PhD)
Qualification Level: Doctoral
Keywords: GaN, thermal management, microwave power amplifiers
Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering
Colleges/Schools: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Funder's Name: UNSPECIFIED
Supervisor's Name: Wasige, Dr Edward
Date of Award: 2015
Embargo Date: 22 October 2018
Depositing User: Dr Abdullah Al-Khalidi
Unique ID: glathesis:2015-6785
Copyright: Copyright of this thesis is held by the author.
Date Deposited: 23 Oct 2015 08:40
Last Modified: 02 Nov 2015 16:36
URI: http://theses.gla.ac.uk/id/eprint/6785

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