The Refractive Index Change in GaAs-AlGaAs Quantum Wells Produced by Neutral Impurity Induced Disordering Using Boron and Fluorine

Hansen, Stein Ivar (1993) The Refractive Index Change in GaAs-AlGaAs Quantum Wells Produced by Neutral Impurity Induced Disordering Using Boron and Fluorine. PhD thesis, University of Glasgow.

Abstract

This thesis is concerned with quantum well intermixing in GaAs-AlGaAs multiple quantum well structures due to the impurity induced disordering effect using the electrically neutral impurities boron and fluorine. Particular emphasis is put on the refractive index change induced by the disordering process, and on methods of implementing this technique in the development of novel semiconductor laser structures. Selective intermixing of quantum wells is a powerful tool in the quest for developing functional integrated photonic structures. The use of impurities to enhance the interdiffusion rate of group III materials in quantum wells and barriers in well defined regions enables the creation of regions with lower optical propagation loss (< 4.5 dBcm-1).This can be utilised in low-loss waveguides for optical interconnects, extended cavity lasers, high efficiency distributed Bragg reflector lasers and more. The introduction of the impurities used in IID leads to an increased interdiffusion rate of the group III materials in the III-V semiconductor quantum well structure when present in volume concentrations above a threshold value (?1018 cm-3) and when the structure is subjected to annealing at a temperature (e.g. 890

• Item Type: Thesis (PhD)
• Qualification Level: Doctoral
• Additional Information: Adviser: Richard De Le Rue
• Keywords: Electrical engineering, Condensed matter physics
• Date of Award: 1993
• Depositing User: Enlighten Team
• Unique ID: glathesis:1993-75711
• Copyright: Copyright of this thesis is held by the author.
• Date Deposited: 19 Dec 2019 09:15
• Last Modified: 19 Dec 2019 09:15
• URI: https://theses.gla.ac.uk/id/eprint/75711