Kinetics, Technology and Characterisation of Impurity-Free Vacancy Disordering for Photonic Devices in GaAs-AlGaAs

Saher Helmy, Amr (1998) Kinetics, Technology and Characterisation of Impurity-Free Vacancy Disordering for Photonic Devices in GaAs-AlGaAs. PhD thesis, University of Glasgow.

Abstract

The work presented in this thesis studies the kinetics, technology, and characterisation methods used for the impurity-free vacancy disordering process using dielectric cap annealing technique. Statistical models for defect diffusion have successfully described the kinetics of compositional intermixing in GaAs. Order of magnitude agreement between the predicted and experimentally measured PL shifts was obtained. Various dielectric caps have been investigated when studying the technology of dielectric cap annealing induced intermixing, of which SrF2, SiO2, SiO2:P are most important. A selective intermixing process using only SiO2 was also developed, by processing the caps in oxygen plasma to suppress intermixing. Differential shifts in excess of 100 meV at anneal temperature of 925

• Item Type: Thesis (PhD)
• Qualification Level: Doctoral
• Keywords: Electrical engineering, Condensed matter physics
• Date of Award: 1998
• Depositing User: Enlighten Team
• Unique ID: glathesis:1998-75930
• Copyright: Copyright of this thesis is held by the author.
• Date Deposited: 19 Nov 2019 17:25
• Last Modified: 19 Nov 2019 17:25
• URI: https://theses.gla.ac.uk/id/eprint/75930