High Pressure Optical Studies of Semiconductors

Zhou, Haiping (1992) High Pressure Optical Studies of Semiconductors. PhD thesis, University of Glasgow.

Abstract

Until this work was completed no detailed studies of the low-temperature emission of A10.48gIn0.52As under high pressures were available to the best of our knowledge. We investigated the low-temperature emission of Al0.48gIn0.52AS under high pressures from 1 bar up to 92 kbar, especially with respect to the changes in luminescence mechanisms that occur concurrently with the crossover between the direct- and indirect-related bands. By investigating the temperature and excitation power dependence of the photoluminescence (PL) together with the photoluminescence excitation (PLE), we demonstrated that the low-temperature emission of Al0.48In0.52As is not excitonic but due to (D

• Item Type: Thesis (PhD)
• Qualification Level: Doctoral
• Additional Information: Adviser: Clivia Sotomayor Torres
• Keywords: Condensed matter physics, Optics
• Date of Award: 1992
• Depositing User: Enlighten Team
• Unique ID: glathesis:1992-76287
• Copyright: Copyright of this thesis is held by the author.
• Date Deposited: 19 Nov 2019 16:10
• Last Modified: 19 Nov 2019 16:10
• URI: https://theses.gla.ac.uk/id/eprint/76287