High Pressure Optical Studies of Semiconductors

Zhou, Haiping (1992) High Pressure Optical Studies of Semiconductors. PhD thesis, University of Glasgow.

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Until this work was completed no detailed studies of the low-temperature emission of A10.48gIn0.52As under high pressures were available to the best of our knowledge. We investigated the low-temperature emission of Al0.48gIn0.52AS under high pressures from 1 bar up to 92 kbar, especially with respect to the changes in luminescence mechanisms that occur concurrently with the crossover between the direct- and indirect-related bands. By investigating the temperature and excitation power dependence of the photoluminescence (PL) together with the photoluminescence excitation (PLE), we demonstrated that the low-temperature emission of Al0.48In0.52As is not excitonic but due to (D

Item Type: Thesis (PhD)
Qualification Level: Doctoral
Additional Information: Adviser: Clivia Sotomayor Torres
Keywords: Condensed matter physics, Optics
Date of Award: 1992
Depositing User: Enlighten Team
Unique ID: glathesis:1992-76287
Copyright: Copyright of this thesis is held by the author.
Date Deposited: 19 Nov 2019 16:10
Last Modified: 19 Nov 2019 16:10
URI: https://theses.gla.ac.uk/id/eprint/76287

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