Zhou, Haiping
(1992)
High Pressure Optical Studies of Semiconductors.
PhD thesis, University of Glasgow.
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Abstract
Until this work was completed no detailed studies of the low-temperature emission of A10.48gIn0.52As under high pressures were available to the best of our knowledge. We investigated the low-temperature emission of Al0.48gIn0.52AS under high pressures from 1 bar up to 92 kbar, especially with respect to the changes in luminescence mechanisms that occur concurrently with the crossover between the direct- and indirect-related bands. By investigating the temperature and excitation power dependence of the photoluminescence (PL) together with the photoluminescence excitation (PLE), we demonstrated that the low-temperature emission of Al0.48In0.52As is not excitonic but due to (D
| Item Type: |
Thesis
(PhD)
|
| Qualification Level: |
Doctoral |
| Additional Information: |
Adviser: Clivia Sotomayor Torres |
| Keywords: |
Condensed matter physics, Optics |
| Date of Award: |
1992 |
| Depositing User: |
Enlighten Team
|
| Unique ID: |
glathesis:1992-76287 |
| Copyright: |
Copyright of this thesis is held by the author. |
| Date Deposited: |
19 Nov 2019 16:10 |
| Last Modified: |
19 Nov 2019 16:10 |
| URI: |
http://theses.gla.ac.uk/id/eprint/76287 |
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