Electron Transport in Dry-Etched n+-GaAs Nanostructures

Rahman, Mahfuzur (1992) Electron Transport in Dry-Etched n+-GaAs Nanostructures. PhD thesis, University of Glasgow.

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Abstract Not Provided.

Item Type: Thesis (PhD)
Qualification Level: Doctoral
Keywords: Electrical engineering
Date of Award: 1992
Depositing User: Enlighten Team
Unique ID: glathesis:1992-78409
Copyright: Copyright of this thesis is held by the author.
Date Deposited: 30 Jan 2020 15:28
Last Modified: 30 Jan 2020 15:28
URI: https://theses.gla.ac.uk/id/eprint/78409

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