Cheng, Huihua (2025) Fabrication and characterisation of sub-50 nm gate using single-step EBL InP HEMT with Au/Ge/Ni/Au ultra-low contact resistance for next-generation communication. PhD thesis, University of Glasgow.
Due to Embargo and/or Third Party Copyright restrictions, this thesis is not available in this service.Abstract
Abstract not currently available.
| Item Type: | Thesis (PhD) |
|---|---|
| Qualification Level: | Doctoral |
| Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering |
| Colleges/Schools: | College of Science and Engineering > School of Engineering |
| Supervisor's Name: | Li, Professor Chong and Zhang, Professor Lei |
| Date of Award: | 2025 |
| Embargo Date: | 17 October 2027 |
| Depositing User: | Theses Team |
| Unique ID: | glathesis:2025-85570 |
| Copyright: | Copyright of this thesis is held by the author. |
| Date Deposited: | 06 Nov 2025 16:10 |
| Last Modified: | 06 Nov 2025 16:10 |
| Thesis DOI: | 10.5525/gla.thesis.85570 |
| URI: | https://theses.gla.ac.uk/id/eprint/85570 |
| Related URLs: |
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