Semiconductor Quantum-Well Extended Cavity Lasers and Deep-Surface Gratings for Distributed Bragg Reflector Lasers

Yee, Hoshin Hocking (1995) Semiconductor Quantum-Well Extended Cavity Lasers and Deep-Surface Gratings for Distributed Bragg Reflector Lasers. PhD thesis, University of Glasgow.

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Abstract

This thesis is concerned with two different kinds of optoelectronic component. The first of these is an extended-cavity laser diode, with results for both oxide-stripe and ridge waveguide structures. The impurity free vacancy diffusion (IFVD) technique was used to reduce the propagation losses of the passive waveguide section. A low- damage and high-selectivity dry etching technique, magnetically-confined-plasma reactive ion etching (MCP RIE), was used particularly for the ridge waveguide etch. The second focus is on deep surface gratings, fabricated by the two-beam interference technique, for distributed Bragg reflector laser diodes. The impact of native oxide on the quantum well intermixing was investigated in detail and a model was adopted to interpret the native oxide effects on the impurity-free vacancy diffusion. It was found that a 24-nm blue shift in the disordered region was obtained for the samples annealed at 940

Item Type: Thesis (PhD)
Qualification Level: Doctoral
Additional Information: Adviser: Richard Da La Rue
Keywords: Electrical engineering, Condensed matter physics, Electromagnetics, Optics
Date of Award: 1995
Depositing User: Enlighten Team
Unique ID: glathesis:1995-75500
Copyright: Copyright of this thesis is held by the author.
Date Deposited: 19 Nov 2019 19:38
Last Modified: 19 Nov 2019 19:38
URI: http://theses.gla.ac.uk/id/eprint/75500

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