Semiconductor Quantum-Well Extended Cavity Lasers and Deep-Surface Gratings for Distributed Bragg Reflector Lasers

Yee, Hoshin Hocking (1995) Semiconductor Quantum-Well Extended Cavity Lasers and Deep-Surface Gratings for Distributed Bragg Reflector Lasers. PhD thesis, University of Glasgow.

Abstract

This thesis is concerned with two different kinds of optoelectronic component. The first of these is an extended-cavity laser diode, with results for both oxide-stripe and ridge waveguide structures. The impurity free vacancy diffusion (IFVD) technique was used to reduce the propagation losses of the passive waveguide section. A low- damage and high-selectivity dry etching technique, magnetically-confined-plasma reactive ion etching (MCP RIE), was used particularly for the ridge waveguide etch. The second focus is on deep surface gratings, fabricated by the two-beam interference technique, for distributed Bragg reflector laser diodes. The impact of native oxide on the quantum well intermixing was investigated in detail and a model was adopted to interpret the native oxide effects on the impurity-free vacancy diffusion. It was found that a 24-nm blue shift in the disordered region was obtained for the samples annealed at 940

• Item Type: Thesis (PhD)
• Qualification Level: Doctoral
• Additional Information: Adviser: Richard Da La Rue
• Keywords: Electrical engineering, Condensed matter physics, Electromagnetics, Optics
• Date of Award: 1995
• Depositing User: Enlighten Team
• Unique ID: glathesis:1995-75500
• Copyright: Copyright of this thesis is held by the author.
• Date Deposited: 19 Nov 2019 19:38
• Last Modified: 19 Nov 2019 19:38
• URI: https://theses.gla.ac.uk/id/eprint/75500