Impact of atomistic device variability on analogue circuit design

Feng, Hong (2011) Impact of atomistic device variability on analogue circuit design. PhD thesis, University of Glasgow.

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Scaling of complementary metal-oxide-semiconductor (CMOS) technology has benefited the semiconductor industry for almost half a century. For CMOS devices with a physical gate-length in the sub-100 nm range, extreme device variability is introduced and has become a major stumbling block for next generation analogue circuit design. Both opportunities and challenges have therefore confronted analogue circuit designers. Small geometry device can enable high-speed analogue circuit designs, such as data conversion interfaces that can work in the radio frequency range. These designs can be co-integrated with digital systems to achieve low cost, high-performance, single-chip solutions that could only be achieved using multi-chip solutions in the past. However, analogue circuit designs are extremely vulnerable to device mismatch, since a large number of symmetric transistor pairs and circuit cells are required. The increase in device variability from sub-100 nm processes has therefore significantly reduced the production yield of the conventional designs.
Mismatch models have been developed to analytically evaluate the magnitude of random variations. Based on measurements from custom designed test structures, the statistics of process variation can be estimated using design related parameters. However, existing models can no longer accurately estimate the magnitude of mismatch for sub-100 nm “atomistic” devices, since short-channel effects have become important. In this thesis, a new mismatch model for small geometry devices will be proposed to address this problem.
Based on knowledge of the matching performance obtained from the mismatch model, design solutions are desired at different design levels for a variety of circuit topologies. In this thesis, transistor level compensation solutions have been investigated and closed-loop compensation circuits have been proposed. At circuit level, a latch-based comparator has been used to develop a compensation solution because this type of comparator is extremely sensitive to the device mismatch. These comparators are also used as the fundamental building block for the analogue-to-digital converters (ADC). The proposed comparator compensation scheme is used to improve the performance of a high-speed flash ADC.

Item Type: Thesis (PhD)
Qualification Level: Doctoral
Keywords: Analogue circuit design, Variability, NanoCMOS, Atomistic Device, CMOS, High Speed Flash ADC, Mismatch Model, Body biasing, Drain Compensation, Source Compensation, Latch Comparator
Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering
Colleges/Schools: College of Science and Engineering > School of Engineering
Date of Award: 2011
Depositing User: Dr Feng Hong
Unique ID: glathesis:2011-3074
Copyright: Copyright of this thesis is held by the author.
Date Deposited: 15 Dec 2011
Last Modified: 10 Dec 2012 14:03

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