Characterisation of Reactive Ion Etch Processes for Ternary III-V Semiconductors

Bunting, Andrew Stuart (1996) Characterisation of Reactive Ion Etch Processes for Ternary III-V Semiconductors. PhD thesis, University of Glasgow.

Abstract

The work presented within this thesis concerns the development and characterisation of reactive ion etch processes for the compound Ill-V semiconductors Al0.3Ga0.7As, In0.53Ga0.47 As and In0.52Al0.48As. Two different etch chemistries, one based on the mixture of methane and hydrogen and the other formed from halogenated gases were studied.

• Item Type: Thesis (PhD)
• Qualification Level: Doctoral
• Additional Information: Adviser: Adrian Murrell
• Keywords: Electrical engineering, Materials science
• Date of Award: 1996
• Depositing User: Enlighten Team
• Unique ID: glathesis:1996-74590
• Copyright: Copyright of this thesis is held by the author.
• Date Deposited: 27 Sep 2019 17:39
• Last Modified: 27 Sep 2019 17:39
• URI: https://theses.gla.ac.uk/id/eprint/74590