Bunting, Andrew Stuart (1996) Characterisation of Reactive Ion Etch Processes for Ternary III-V Semiconductors. PhD thesis, University of Glasgow.
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Abstract
The work presented within this thesis concerns the development and characterisation of reactive ion etch processes for the compound Ill-V semiconductors Al0.3Ga0.7As, In0.53Ga0.47 As and In0.52Al0.48As. Two different etch chemistries, one based on the mixture of methane and hydrogen and the other formed from halogenated gases were studied.
Item Type: | Thesis (PhD) |
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Qualification Level: | Doctoral |
Additional Information: | Adviser: Adrian Murrell |
Keywords: | Electrical engineering, Materials science |
Date of Award: | 1996 |
Depositing User: | Enlighten Team |
Unique ID: | glathesis:1996-74590 |
Copyright: | Copyright of this thesis is held by the author. |
Date Deposited: | 27 Sep 2019 17:39 |
Last Modified: | 27 Sep 2019 17:39 |
URI: | https://theses.gla.ac.uk/id/eprint/74590 |
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