Simulation of resonant tunnelling diodes with the non-equilibrium Green’s function formalism

Acharya, Pranav (2025) Simulation of resonant tunnelling diodes with the non-equilibrium Green’s function formalism. PhD thesis, University of Glasgow.

Abstract

This thesis describes the research carried out by the author in simulating resonant tunnelling diodes (RTDs), nanoelectronic devices which exhibit a region of negative differential resistance (NDR) due to quantum tunnelling, with device variation. This research was carried out with the nano-electronic simulation software (NESS), which is under development at the University of Glasgow. Chapter 1 describes the background and theory of RTDs, before following up with chapter 2 on the theory and methodology of using NESS with the non-equilibrium Green’s function (NEGF) transport solver module within this thesis. In the following chapters 3, 4 and 5, respectively the effects of device dimension variation, random discrete dopants (RDDs) and interface roughness (IR) on RTD were investigated. Variation in current-voltage characteristics (IV) due to RDDs and IR were additionally shown to allow RTDs to encode information, and thus provides support for the potential of RTDs to compose physical unclonable functions (PUFs) which can uniquely identify items which they are placed on.

• Item Type: Thesis (PhD)
• Qualification Level: Doctoral
• Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering
• Colleges/Schools: College of Science and Engineering > School of Engineering
• Supervisor's Name: Georgiev, Professor Vihar
• Date of Award: 2025
• Depositing User: Theses Team
• Unique ID: glathesis:2025-85532
• Copyright: Copyright of this thesis is held by the author.
• Date Deposited: 23 Oct 2025 10:30
• Last Modified: 24 Oct 2025 09:31
• Thesis DOI: 10.5525/gla.thesis.85532
• URI: https://theses.gla.ac.uk/id/eprint/85532

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